CN EN

SINO Plasma6000CCP dielectric etcher

Process application
Contact/Via、Spacer、Passivation、Hardmask、SAB、Etch Back 



Wafer size
8 inches and below



Applicable substrate material
Silicon, silicon carbide, gallium nitride, gallium arsenide, sapphire, quartz glass



Application area
Scientific research, Si based process, compounds (including GaN&GaAs&SiC, etc.), MEMS field, filter, optical communication, micro display and other fields


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